| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To selectively enable and disable a voltage generation circuit of a memory device. <P>SOLUTION: The method and apparatus for controlling a voltage generator of a memory device are provided. A temperature of the memory device is measured. If the measured temperature is outside a threshold temperature range, the memory device is placed in a clocked standby mode (CSM), whereby the voltage generator is selectively enabled with a clock signal. If the measured temperature is within a threshold temperature range, the memory device is prevented from being placed in the clocked standby mode (CSM). <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
