METHOD OF MANUFACTURING CHARGE TRAP INSULATOR, AND METHOD OF MANUFACTURING NONVOLATILE SEMICONDUCTOR DEVICE OF SONOS TYPE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a charge trap insulating film, and a method of manufacturing a nonvolatile semiconductor device of SONOS type. SOLUTION: A first oxide film 15 including silicon oxide is formed. A cyclic chemical vapor deposition process using a silicon source substance and a nitrogen source gas is performed to form a silicon nitride film 20 containing a silicon-rich nitride (SixNy, a value of x/y is 0.7 to 1.5) on the first oxide film 15. A second oxide film 30 is formed on the silicon nitride film 20. As a result, a charge trap insulator 50 having an excellent erasing characteristic is completed. COPYRIGHT: (C)2007,JPO&INPIT