| 摘要 |
In a data program/erase device of a nonvolatile memory cell, data are re-written by means of an FN tunnel current of an entire channel surface. In a buried n-well of a semiconductor substrate in a flash memory formation region, p wells are placed in the form isolated from each other. In each of the p wells, a capacitor portion, a capacitor portion for programming/erasing data and an MIS.FET for reading data are placed. In the capacitor portion for programming/erasing data, rewriting (programming and erasing) of data is performed by means of an FN tunnel current of an entire channel surface.
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