发明名称 REDUCING PLASMA IGNITION PRESSURE
摘要 A method in a plasma processing system for processing a semiconductor substrate is disclosed. The plasma processing system includes a plasma processing chamber and an electrostatic chuck coupled to a bias compensation circuit. The method includes igniting a plasma in a plasma ignition step. Plasma ignition step is performed while a first bias compensation voltage provided by the bias compensation circuit to the chuck is substantially zero and while a first chamber pressure within the plasma processing chamber is below about 90 mTorr. The method further includes processing the substrate in a substrate-processing step after the plasma is ignited. The substrate-processing step employs a second bias compensation voltage provided by the bias compensation circuit that is higher than the first bias compensation voltage and a second chamber pressure substantially equal to the first chamber pressure. ® KIPO & WIPO 2007
申请公布号 KR20070030247(A) 申请公布日期 2007.03.15
申请号 KR20067027920 申请日期 2005.06.14
申请人 LAM RESEARCH CORPORATION 发明人 WIEPKING MARK;LYNDAKER BRADFORD J;KUTHI ANDRAS;FISCHER ANDREAS
分类号 B23K9/00 主分类号 B23K9/00
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