| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride-based semiconductor light emitting element capable of lowering a driving voltage by high-densely forming an unevenness of not more than 1 μm at the interface between a metal and a semiconductor, and of achieving a long life and a high light emitting efficiency owing to a decrease in heat value, and to provide method of manufacturing the same. <P>SOLUTION: The method for manufacturing the nitride-based semiconductor light emitting element includes the steps of: forming the unevenness having large level difference on the surface of the nitride compound semiconductor element (1); forming the two-staged unevenness having size difference in levels by forming the unevenness having small levels on the surface of the unevenness having large levels (2); and forming electrodes on the surface of the two-staged unevenness having the size differences in the levels. <P>COPYRIGHT: (C)2007,JPO&INPIT |
