发明名称 |
BACKSIDE-GROUND-TYPE FLIP CHIP SEMICONDUCTOR PACKAGE |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor package which can improve heat dissipation properties by dissipating heat generated by a chip through a backside ground and can enhance electrical properties by forming an electrical ground without generating a parasitic component. <P>SOLUTION: A backside-ground-type flip chip semiconductor package comprises: a substrate 110; at least one chip 120 which is flip-chip bonded onto the upper surface of the substrate 110 so as to be electrically connected to a circuit pattern-printed on the substrate 110; a molded portion 130 which is formed on the substrate 110 so that a backside ground 125 of the chip 120 is exposed to the outside; and a conductive metal layer 140 which is provided on the outer surface of the molded portion 130 so as to be electrically connected to the backside ground 125. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
申请公布号 |
JP2007067407(A) |
申请公布日期 |
2007.03.15 |
申请号 |
JP20060232263 |
申请日期 |
2006.08.29 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO LTD |
发明人 |
JEONG IN HO;KIM NAM HEUNG |
分类号 |
H01L23/28;H01L23/12;H01L25/04;H01L25/18 |
主分类号 |
H01L23/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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