发明名称 TARGET
摘要 PROBLEM TO BE SOLVED: To provide a target which enables to deposit a thin film of a metal oxide comprising bismuth and titanium such as Bi<SB>4</SB>Ti<SB>3</SB>O<SB>12</SB>at a higher speed by a sputtering process in a state where the generation of dust is suppressed. SOLUTION: The target 101 is a sintered compact composed of Bi particulates 102 in which bismuth (Bi) is metal-bonded and Ti particulates 103 in which titanium (Ti) is metal-bonded. The target 101 can be formed, e.g., by mixing powder composed of Bi particulates with a particle diameter of about 10 to 50μm and powder composed of Ti particulates with a particle diameter of about 10 to 50μm, so as to almost be the composition of Bi<SB>4</SB>Ti<SB>3</SB>, packing them into a prescribed vessel, so as to be molded into a prescribed shape, applying temperature (≤270°C) at which Bi is not melted and suitable pressure, and performing firing. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007063653(A) 申请公布日期 2007.03.15
申请号 JP20050254526 申请日期 2005.09.02
申请人 NIPPON TELEGR & TELEPH CORP <NTT>;NTT AFTY CORP 发明人 JIN YOSHITO;SAKAI HIDEAKI;SHIMADA MASARU;KIUCHI MIKIHO
分类号 C23C14/34;B22F1/00;C22C1/04;C22C12/00 主分类号 C23C14/34
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