| 摘要 |
A radio frequency ("RF") amplifier as disclosed herein includes an on-chip power transistor formed on a substrate and an on-chip harmonic termination formed on the same substrate. The on-chip harmonic termination is configured to provide a short-circuit termination for even harmonics of the RF output signal and to provide an open-circuit termination for odd harmonics of the RF output signal. The on-chip harmonic termination employs tunable inductance elements and tunable capacitor elements to achieve the desired resonant characteristics. In one example embodiment, the on-chip harmonic termination utilizes conductive wire bonds as the tunable inductance elements, and arrays or banks of on-chip capacitors as the tunable capacitance elements.
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