发明名称 |
Fabrication of single or multiple gate field plates |
摘要 |
A process for fabricating single or multiple gate field plates using consecutive steps of dielectric material deposition/growth, dielectric material etch and metal evaporation on the surface of a field effect transistors. This fabrication process permits a tight control on the field plate operation since dielectric material deposition/growth is typically a well controllable process. Moreover, the dielectric material deposited on the device surface does not need to be removed from the device intrinsic regions: this essentially enables the realization of field-plated devices without the need of low-damage dielectric material dry/wet etches. Using multiple gate field plates also reduces gate resistance by multiple connections, thus improving performances of large periphery and/or sub-micron gate devices.
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申请公布号 |
US2007059873(A1) |
申请公布日期 |
2007.03.15 |
申请号 |
US20040570964 |
申请日期 |
2004.09.09 |
申请人 |
CHINI ALESSANDRO;MISHRA UMESH K;PARIKH PRIMIT;WU YIFENG |
发明人 |
CHINI ALESSANDRO;MISHRA UMESH K.;PARIKH PRIMIT;WU YIFENG |
分类号 |
H01L21/8238;H01L;H01L29/40 |
主分类号 |
H01L21/8238 |
代理机构 |
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地址 |
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