SONOS type non-volatile semiconductor devices and methods of forming the same

摘要

A SONOS type non-volatile semiconductor device includes a semiconductor substrate, source/drain regions doped with impurities formed in the semiconductor substrate, a channel region formed in the semiconductor substrate between the source/drain regions, a tunnel insulation layer formed on the channel region, a charge-trapping layer formed on the tunnel insulation layer, a blocking insulation layer formed on the charge-trapping layer, and a gate electrode formed on the blocking insulation layer. The charge-trapping layer includes aluminum nitride having a chemical formula Al_xN_y and/or the blocking insulation layer includes aluminum nitride having a chemical formula Al_pN_q, such that x, y, p, and q are positive integers, x and y satisfy a relation x>y, and p and q satisfy a relation p