<p>The invention relates to a remanent volatile memory cell (PVCELL) for storing a binary datum (Fp) for a retention time (Tp) that is independent of the memory cell supply voltage (Vcc). According to the invention, the memory cell comprises: a capacitive memory point (CMP) which supplies a remanent voltage (Vp) and which has a determined discharge time, a switch (T1) which is used to discharge the memory point when an erase signal (RESET) has an active value, a switch (T2) which is used to charge the memory point when a write signal (SET) has an active value, and a detector/amplifier circuit (SACT) comprising an input (INI) which receives the remanent voltage (Vp) and an output (OUT1) which supplies the binary datum (Fp). The invention is particularly suitable for managing an inventory flag in a contactless integrated circuit.</p>
申请公布号
WO2007028888(A1)
申请公布日期
2007.03.15
申请号
WO2006FR02036
申请日期
2006.09.05
申请人
STMICROELECTRONICS SA;RIZZO, PIERRE;MOREAUX, CHRISTOPHE;NAURA, DAVID;KARI, AHMED
发明人
RIZZO, PIERRE;MOREAUX, CHRISTOPHE;NAURA, DAVID;KARI, AHMED