| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a CMOS image sensor having high sensitivity and low crosstalk, particularly at far-infrared rays to infrared wavelengths. <P>SOLUTION: A CMOS image sensor of the present invention is characterized by comprising: a substrate; an epitaxial layer on the substrate; a plurality of pixels extending into the epitaxial layer for receiving light; and at least one of a horizontal barrier layer between the substrate and the epitaxial layer for preventing the carriers generated in the substrate from moving to the epitaxial layer, and a plurality of lateral barrier layers between the adjacent ones of the plurality of pixels for preventing the lateral diffusion of electrons in the epitaxial layer. <P>COPYRIGHT: (C)2007,JPO&INPIT |
