| 摘要 |
<P>PROBLEM TO BE SOLVED: To protect a light receiving element separation part against damage due to etching in forming a semiconductor device with built-in light receiving elements. <P>SOLUTION: This semiconductor device manufacturing method forms an antireflection film in a division area with a light receiving area 12 in a separation photo diode area 1, and a junction area for a division part 8 outside of the above light receiving area 12 for separating photo diodes and a cathode; and forms a polysilicon film 14 covering the antireflection film. In this way, the antireflection film of the junction area for the division part 8 outside of the light receiving area 12 and the cathode is protected against etching, etc. with the polysilicon film 14, so that crystal defects or impurity density variations are suppressed; and devices with built-in high performance, high quality photo diodes can be formed. <P>COPYRIGHT: (C)2007,JPO&INPIT |
