| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of surely preventing short-circuit defects without generating deposited foreign matters when removing a side wall formed when using fluorine-based gas for dry-etching a metal film containing titanium, and the semiconductor device. <P>SOLUTION: An etching mask 23 is formed on the metal film 17 containing the titanium and formed on a semiconductor substrate, and the metal film 17 is dry-etched through the etching mask 23. After the dry etching, the etching mask 23 is removed and a waterproof film 32 which obstructs the permeation of water molecules is formed on the surface of the metal film 17. Then, the projected part projected upwards from the upper surface of the metal film 17 of the side wall 31 composed of a reaction product and formed on the inner side face of an etching part 18 in the process of the dry etching is removed by plasma treatment using gas containing fluorine elements. <P>COPYRIGHT: (C)2007,JPO&INPIT |
