| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce the size of a memory cell in a semiconductor device having the memory cells made of access transistors and thyristors. <P>SOLUTION: This semiconductor device has memory cells having access transistors 11 and negative resistor elements (thyristors) 12, 13 connected in parallel to the access transistors 11. The thyristors have gate electrodes 12G, 13G to control turn-on and turn-off. <P>COPYRIGHT: (C)2007,JPO&INPIT |
