发明名称 METHOD OF MANUFACTURING SUBSTRATE FOR SEMICONDUCTOR CHIP LOADING, AND SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a substrate for semiconductor chip loading which enhances the density of connection terminals with a semiconductor chip, and laying lines of input/output terminals in a mounting region, and a semiconductor device using the substrate for semiconductor chip loading. <P>SOLUTION: In a metallic foil made of three layers in which a second metal layer 3 is formed on a first metal layer 1 and can be selectively etched from the layer, and in which a third metal layer 1' having the same metal composition as the first metal layer 1 and a thickness different from the first metal layer 1, is further formed on the second metal layer 3, a projective electrode group with a predetermined size is formed on the first metal layer 1 by etching. By using this member, surfaces of the projective electrode group is made to oppose with a third metal layer 1' of a separately prepared three layer foil and the surfaces of the projective electrode group are pressurized to contact with the surface of the third metal layer 1' through a thermosetting resin. The substrate for semiconductor chip loading is manufactured by etching at least an outermost third metal layer side of the member, so that solder ball connectable terminals are formed. <P>COPYRIGHT: (C)2007,JPO&INPIT</p>
申请公布号 JP2007067430(A) 申请公布日期 2007.03.15
申请号 JP20060293148 申请日期 2006.10.27
申请人 HITACHI CHEM CO LTD 发明人 NAKAMURA HIDEHIRO;YAMAZAKI AKIO;ICHIMURA SHIGEKI
分类号 H01L21/60 主分类号 H01L21/60
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