发明名称 SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device that can optimally control substrate bias. SOLUTION: To optimize substrate bias value, a temperature monitor circuit 503 is provided within a circuit block 502 within an LSI 501. The optimal value of the substrate bias of the temperature monitor circuit 503 largely depends on the temperature. Therefore, the temperature is monitored and the substrate bias depending on the temperature is applied. In addition to the temperature being monitored, a direct leak current is monitored and the substrate bias is applied in which the leak current becomes minimal. The semiconductor element (power source) is used that is optimal for the monitor circuits. The power source can be easily generated within a small area. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007067275(A) 申请公布日期 2007.03.15
申请号 JP20050253521 申请日期 2005.09.01
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 KUMAMARU TOMOYUKI
分类号 H01L21/822;H01L21/8234;H01L27/04;H01L27/06 主分类号 H01L21/822
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