发明名称 INORGANIC VAPOR DEPOSITION SOURCE AND METHOD FOR CONTROLLING HEAT SOURCE THEREFOR
摘要 PROBLEM TO BE SOLVED: To provide an inorganic vapor deposition source which prevents a vaporizing substance from being solidified at a nozzle by minimizing a period of time necessary for a deposition rate to be stabilized and enhancing the efficiency of vapor deposition, and thereby minutely controls a temperature of the vapor deposition source, and to prevent a method for controlling a heat source thereof. SOLUTION: The inorganic vapor deposition source has: a crucible which is arranged in a deposition chamber and evaporates a metal or an inorganic substance accommodated therein; a heating section which includes the heat source for supplying heat to the crucible; a housing for shielding heat radiated from the heating section; an external wall for safely accommodating the crucible therein; and a nozzle section for spouting a substance evaporated from the crucible. The heating section comprises: an upper heating part and a lower heating part which are placed in the upper part and the lower part of the crucible respectively; and a first power source for supplying an electric power to the upper heating part and a second power source for supplying an electric power to the lower heating part. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007063660(A) 申请公布日期 2007.03.15
申请号 JP20060113737 申请日期 2006.04.17
申请人 SAMSUNG SDI CO LTD 发明人 JEONG MIN JAE;KIM DOKON;CHOI YOUNG MOOK
分类号 C23C14/24;H01L21/285;H01L51/50;H05B33/10 主分类号 C23C14/24
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