THIN FILM MANUFACTURING APPARATUS AND THIN FILM MANUFACTURING METHOD

摘要

A chamber (1) is supplied with an operation gas (17) containing chlorine, and the chamber is also supplied with oxygen and hydrogen to increase the pressure in the chamber (1) to lengthen the retention time, then, an Al member (11) to be etched is etched by chlorine radical, and a precursor AlCl<SUB>3</SUB> composed of Al ingredient included in the member and halogen Cl is generated. While generating an intermediate of AlX<SUB>2</SUB> from the precursor AlX<SUB>3</SUB>, a film is formed of an Al<SUB>2</SUB>O<SUB>3</SUB> ingredient generated by reaction of oxygen, hydrogen and AlX<SUB>2</SUB> on a substrate (3). Thus, an Al oxide thin film is surely manufactured under a low temperature environment.