| 摘要 |
PROBLEM TO BE SOLVED: To provide a metal wiring of a semiconductor element which can be applied also to a semiconductor element of 65 nm or less, and a method for manufacturing it, by using CVD TiSiN as a material of a barrier metal layer of a copper wiring. SOLUTION: The metal wiring of the semiconductor element is constituted by comprising a semiconductor substrate on which the semiconductor element is formed, an insulating film which is formed on the semiconductor substrate while having a contact hole at the part corresponding to the semiconductor element, a TiSiN barrier metal layer formed in the contact hole, and the copper wiring formed on the TiSiN barrier metal layer. COPYRIGHT: (C)2007,JPO&INPIT |
