| 摘要 |
PROBLEM TO BE SOLVED: To suppress side etching of a film to be etched without increasing the number of processes. SOLUTION: In a substrate structure 20, a protection film 10 existing in an etching schedule region 18 is removed by ICP-RIE. An exposed region 22 where a main face 12a of a substrate 12 is exposed is formed. Namely, the substrate structure is provided with the substrate, a protection film covering the substrate, photoresist 14 covering the protection film, and a hole 16 formed in photoresist. The hole is provided with an opening 16b formed on a surface of photoresist and a hollow part 16c which continues to the opening in a thickness direction of photoresist, and reaches the protection film. ICP-RIE is performed by a condition that (1) ICP power is set to be 20 to 100 W, (2) RIE power is set to be 5 to 50 W, and (3) atmospheric pressure of an etching chamber is set to be 1 to 100 mTorr. COPYRIGHT: (C)2007,JPO&INPIT |
