| 摘要 |
PROBLEM TO BE SOLVED: To provide the structure of a piezoelectric thin-film resonator which can realize further improve in high frequency, without being restricted by the acoustic impedance value of a piezoelectric body. SOLUTION: This piezoelectric thin-film resonator 10 has a laminate structure, including a piezoelectric layer 14, and a pair of electrodes 11, 15 arranged on both the front and rear surfaces of the piezoelectric layer 14 and applying electric field of the laminating direction to the piezoelectric layer 14, where a diamond layer 12 is arranged on one side of the laminate direction of the piezoelectric layer. The laminate structure has the acoustic impedance of each of the layers 14, 13 and 12 increase gradually from the piezoelectric layer 14 to the diamond layer 12, starting from the piezoelectric layer 14 toward the diamond layer 12. COPYRIGHT: (C)2007,JPO&INPIT
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