METHOD FOR EVALUATING ACTION OF INTERNAL GETTERING IN SILICON WAFER, AND STORAGE MEDIUM WITH PROGRAM FOR EVALUATING THE ACTION STORED THEREON

摘要

PROBLEM TO BE SOLVED: To provide a method for evaluating internal gettering capability accurately in a short time at low cost by evaluating an internal gettering action accurately without actual measurement. SOLUTION: When evaluating an internal gettering action in a silicon wafer using an operational expression established among an initial contamination concentration Ciniof iron in the silicon wafer, a density N of an oxygen deposition object, a radius R of the oxygen deposition object, a heat treatment temperature T of internal gettering, a heat treatment time (t) of internal gettering, and a concentration C (t) of iron Fe residual in the silicon wafer after heat treatment; the action of internal gettering in the silicon wafer is evaluated by adding an operational expression taking into account the step of generating a nucleus of iron silicide on a surface of the oxygen deposition object, and the step of gettering iron using the oxygen deposition object wherein the nucleus of iron silicide is generated on its surface. COPYRIGHT: (C)2007,JPO&INPIT