| 摘要 |
<p>In the predicting of the behavior of internal gettering in silicon substrate with the use of an arithmetic expression valid among, in a silicon substrate, the initial contamination concentration of iron (C<SUB>ini</SUB>), density of oxygen precipitate (N), radius of oxygen precipitate (R), internal gettering heat treatment temperature (T), internal gettering heat treatment time (t) and concentration of iron (Fe) remaining in the silicon substrate after heat treatment (C(t)), an arithmetic expression taking into consideration the process of occurrence of iron silicide nuclei at the surface of oxygen precipitate and the process of iron gettering by oxygen precipitate having undergone the occurrence of iron silicide nuclei at the surface thereof is added to thereby accomplish the predicting of the behavior of internal gettering in the silicon substrate. The above is applicable to the internal gettering of non-iron(Fe) contaminant heavy metals, such as copper (Cu) and nickel (Ni).</p> |
