| 摘要 |
<P>PROBLEM TO BE SOLVED: To manufacture at a low cost a GaN single crystal self-standing substrate of an off-angle having a crystal orientation displaced from (0001) instead of (0001) exact. <P>SOLUTION: When a (111) GaAs wafer having an off-angle is used as a ground substrate and GaN is vapor deposited on the ground substrate, a GaN crystal inclined in the same orientation and having the same off-angle as those of the ground substrate is grown. Alternately, a GaN self-standing substrate having an off-angle can be manufactured by using a (111) GaAs substrate having an off angle as a ground substrate, then forming a mask having a plurality of windows on the substrate, and after growing a GaN single crystal layer on the resultant mask, removing the ground substrate. By such a process, a GaN crystal having an off-angle of 0.1-25° can be manufactured. <P>COPYRIGHT: (C)2007,JPO&INPIT |
