| 摘要 |
<P>PROBLEM TO BE SOLVED: To ensure miniaturization, and form a through-hole and a through-electrode in a state where a device forming layer is protected. <P>SOLUTION: There is provided a manufacturing method of a semiconductor device including the through-electrode 56 that connects an electrode pad 20 of a semiconductor element 14 having the device forming layer 18 and the electrode pad 20, to a rewiring pattern 52 formed on the other surface side of the semiconductor element 14. In the method, there are formed the device forming layer 18 and the electrode pad 20 on an upper surface side of the semiconductor element 14, a first resist layer 62 is formed on the surfaces of the electrode pad 20 and the device forming layer 18, an opening 64 is formed in the electrode pad 20 by etching, and a through-hole 54 is formed in the semiconductor element 14 at a position thereof communicated with the opening 64. The device forming layer 18 is protected by the first resist layer 62, and the through-electrode 56 is provided to ensure flip chip connection for miniaturization. <P>COPYRIGHT: (C)2007,JPO&INPIT |
