| 摘要 |
PROBLEM TO BE SOLVED: To provide a vacuum processing device in which a sample is highly precisely uniformed and present CD loss can be improved from about 3 nm to about 1 nm in process performance, for example, so as to realize high production efficiency and high product yield. SOLUTION: In the processing device for performing a plasma processing on the sample, a sample stand is constituted of a plurality of sample stand blocks which are divided in a circumferential direction, namely, in a concentric shape or a radiation shape, and are electrically and heat-conductively formed of independent structures in a control method of temperature distribution, RF bias, and electrostatic adsorption bias of the sample stand. The sample stand blocks are provided with functions for independently controlling a temperature, RF bias or pressure at a rear face of a wafer. COPYRIGHT: (C)2007,JPO&INPIT |
