| 摘要 |
<p>An SONOS type nonvolatile memory device and a manufacturing method thereof are provided to secure easily a trap site and to improve leakage current characteristics of a blocking insulating layer by using an AlxNy layer as the trap site and the blocking insulating layer. An SONOS type nonvolatile memory device comprises a semiconductor substrate(30), source/drain(34a,34b) in the substrate, a channel region(36) between the source/drain in the substrate, a tunnel insulating layer(10) on the channel region, a charge trap layer(12) on the tunnel insulating layer, a blocking insulating layer(14) on the charge trap layer, and a gate electrode on the blocking insulating layer. The charge trap layer and the blocking insulating layer contain AlxNy.</p> |
