发明名称 POSITIVE RESIST COMPOSITION, PATTERN FORMING METHOD USING POSITIVE RESIST COMPOSITION, AND COMPOUND FOR USE IN POSITIVE RESIST COMPOSITION
摘要 <P>PROBLEM TO BE SOLVED: To provide a positive resist composition capable of satisfying no pattern collapse, less scum, larger EL and better profile which enabled coexistence in high order dimension, a pattern forming method using the positive resist composition and a compound for use in the positive resist composition, with respect to a positive resist composition for use in a process of producing a semiconductor such as IC, in production of a circuit board of a liquid crystal, a thermal head or the like, and in another photofabrication process, a pattern forming method using the positive resist composition and a compound for use in the positive resist composition. <P>SOLUTION: The positive resist composition comprises (A) a resin having a specific repeating unit and having solubility in an alkali developer increased by the action of an acid, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation and (C) a solvent. The pattern forming method using the positive resist composition and the compound for use in the positive resist composition are also provided. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007065203(A) 申请公布日期 2007.03.15
申请号 JP20050250049 申请日期 2005.08.30
申请人 FUJIFILM CORP 发明人 IWATO KAORU
分类号 G03F7/039;C08F20/10;H01L21/027 主分类号 G03F7/039
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