INSULATING TARGET MATERIAL, METHOD FOR MANUFACTURING INSULATING TARGET MATERIAL, INSULATING COMPOUND OXIDE FILM, AND DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an insulating target material which can be obtained at a considerably low temperature compared with that in a conventional sintering method.

SOLUTION: The insulating target material is used to obtain an insulating compound oxide film expressed by general formula AB1-xCxO3. The element A consists of at least Pb, the element B consists of at least one of Zr, Ti, V, W and Hf, and the element C consists of at least one of Nb and Ta.

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