摘要 |
<p>In one embodiment, a method for forming a morphologically stable dielectric material is provided which includes exposing a substrate to a hafnium precursor, a silicon precursor and an oxidizing gas to form hafnium silicate material during a chemical vapor deposition (CVD) process and subsequently and optionally exposing the substrate to a post deposition anneal, a nitridation process and a thermal annealing process. In some examples, the hafnium and silicon precursors used during a metal-organic CVD (MOCVD) process are alkylamino compounds, such as tetrakis(diethylamido) hafnium (TDEAH) and tris(dimethylamido) silane (Tris-DMAS). In another embodiment, other metal precursors may be used to form a variety of metal silicates containing tantalum, titanium, aluminum, zirconium, lanthanum, or combinations thereof.</p> |
申请人 |
MUTHUKRISHNAN, SHANKAR;APPLIED MATERIALS, INC.;GOYANI, TEJAL;SHARANGPANI, RAHUL;KHER, SHREYAS, S.;NARWANKAR, PRAVIN, K.;AHMED, KHALED, Z.;MA, YI |
发明人 |
MUTHUKRISHNAN, SHANKAR;GOYANI, TEJAL;SHARANGPANI, RAHUL;KHER, SHREYAS, S.;NARWANKAR, PRAVIN, K.;AHMED, KHALED, Z.;MA, YI |