Lateral semiconductor component with drift path and potential distribution structure, used for potential measurements, includes drift path with potential distribution structure

摘要

Drift path (5) or drift zone, extends laterally in a semiconductor body (7) between first and second electrodes (8, 9). Its material is type n. It is arranged on an insulating- or complementary, p type semiconductor substrate (10). On the top of the drift path (11), above the semiconductor body, the potential distribution structure (6) is arranged between first and second electrodes. The potential distribution structure divides the potential between these electrode in stages, producing a correspondingly-stepped field profile in the drift path below it. Insulation layer (13) intervenes between the underside (12) of the potential distribution structure and the top of the drift path. This (13) is SiO 2, Al 2O 3, or TiO 2. It is alternatively a silicon dioxide- or silicon nitride film. The potential distribution structure includes a layered capacitance between the electrodes on top of the drift path. This includes alternating conductive plates (15) and insulating plates (16). The surface normal (F) to these plates, is parallel to the drift path. Mean spacing between the conductive plates varies. Lateral capacity of the layered capacitance exceeds that of the drift path. In a variant design, a diode stack replaces the layered capacitance. Further variants based on the foregoing principles are described. Doping concentration in the drift path lies between 1 x 10 16> cm -3> and 2 x 10 17> cm -3>. The semiconductor component (1) is a lateral MOSFET, lateral JFET, lateral IGFET, PIN diode or Schottky diode. It has a planar gate structure or trench gate structure. The trench structure of the gate electrode (G) passes through a body zone (35). An independent claim IS INCLUDED FOR the corresponding method of manufacture.