SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE

摘要

In a semiconductor device having a SiC substrate, a JTE layer is not substantially affected by fixed charge, so that a stable dielectric breakdown resistance can be obtained. The semiconductor device comprises a SiC epitaxial layer (2) having an n-type conductivity, an impurity layer (3) formed within the surface of the SiC epitaxial layer (2) and having a p-type conductivity, and a JTE layer (5) formed adjacently to the impurity layer (3) and having a p-type conductivity and a lower impurity concentration than that of the impurity layer (3). The JTE layer (5) is so formed as to be located a predetermined distance from the top surface of the SiC epitaxial layer (2), and a SiC region (10) having an n-type conductivity is formed above the JTE layer (5).