| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of forming a semiconductor layer which has small defect density, good quality and large ion bonding property as a GaN layer etc. has on a semiconductor layer as a silicon carbide layer etc. which has small ion bonding property and strong covalent bonding property. <P>SOLUTION: In the method of forming the semiconductor layer in which a second semiconductor layer 103 having a second ion bonding degree larger than a first ion bonding degree is formed on the surface of a first semiconductor layer 102 having the first ion bonding degree, the second semiconductor layer 103 is formed on the surface of the first semiconductor layer 102 present on the side where the second semiconductor layer 103 is formed while irradiated with electrons under a vacuum. The first semiconductor layer 102 is formed of a silicon carbide semiconductor and the second semiconductor layer 103 is formed of a group III nitride semiconductor. <P>COPYRIGHT: (C)2007,JPO&INPIT |
