| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To realize a good and stable conductive connection status by stable formation of the ideal microscopic concavo-convex shape of a projection electrode. <P>SOLUTION: The main feature of the semiconductor device 10 is that it is equipped with a projection electrode 10 which has a projection 11 composed of resin material formed on a substrate 1, grain 12 arranged on the projection 11, and conductive layer 13 with a concavo-convex surface formed on the foregoing projection 11 and grain 12 where the grain 12 is reflected. Since the grain 12 is arranged on the projection 11, a microscopic surface concavo-convex shape reflecting the grain 12 is formed on the surface of the conductive layer 13. Then, as the convex part of the surface concavo-convex shape breaks through the oxide film of an interconnect line at the time of mounting, the good and stable conductive connection status can be obtained. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
