| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing solution capable of polishing a wiring metal, a barrier metal, and an insulating film material with a low dielectric constant at a proper polishing selection ratio in a polishing process when embedded wiring is formed, and to provide a semiconductor device manufacturing method using the solution. <P>SOLUTION: The semiconductor device manufacturing method has a first chemical mechanical polishing step in which a metal wiring film is formed on an interlayer organic insulating film with a low dielectric constant having a wiring groove, and covered with a barrier metal film by metal plating treatment, and then, the metal film is polished with a metal polishing solution; and a second chemical mechanical polishing step for polishing with a polishing solution in which abrasive grains include organic particles after the first chemical mechanical polishing step. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
