WAFER FOR SEMICONDUCTOR LASER, MANUFACTURING METHOD OF BAR FOR SEMICONDUCTOR LASER, MANUFACTURING METHOD OF LASER CHIP, AND OPTICAL PICKUP

摘要

PROBLEM TO BE SOLVED: To provide a wafer for a semiconductor laser that can proceed with manufacturing procedures without wafer division being performed until immediately before formation of a bar for the semiconductor laser, and can increase the number of obtained laser chips. SOLUTION: On a back surface of an n-type GaAs substrate 1, an n-type electrode Au-Ge layer and an n-type electrode Ni layer are sequentially deposited by a sputtering method. The n-type electrode Ni layer is covered by a gold-plated film 6 having a thickness of 15μm. COPYRIGHT: (C)2007,JPO&INPIT