发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT AND MEMORY
摘要 PROBLEM TO BE SOLVED: To prevent information volatilization in a volatile semiconductor memory when power is interrupted. SOLUTION: In a semiconductor integrated circuit such as a DRAM, an inner power source voltage VDD is supplied to the memory as an operating voltage from a power separation section 16 and stored in a capacitor 17 at normal operation. When the power is interrupted, a power source detector 15 detects the drop of a power source voltage VCC level and outputs a detection signal K. The power separation section 16, receiving the detection signal K, stops the generation of the inner power source voltage VDD, and electrically cuts off the power source voltage VCC which is a power source, then discharges charges stored in the capacitor 17 to be supplied to the memory as the inner power source voltage VDD. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007066346(A) 申请公布日期 2007.03.15
申请号 JP20050247426 申请日期 2005.08.29
申请人 HITACHI ULSI SYSTEMS CO LTD 发明人 MAKUNI KAZUKI;OKINAGA TAKAYUKI;AZUMA SHUICHIRO;MATSUMOTO MASAHIRO;TAKEMURA SHIGERU
分类号 G11C11/405 主分类号 G11C11/405
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