发明名称 |
Methods of Fabricating Semiconductor Devices with Enlarged Recessed Gate Electrodes |
摘要 |
A semiconductor device includes a semiconductor substrate having a recess therein. A gate insulator is disposed on the substrate in the recess. The device further includes a gate electrode including a first portion on the gate insulator in the recess and a second reduced-width portion extending from the first portion. A source/drain region is disposed in the substrate adjacent the recess. The recess may have a curved shape, e.g., may have hemispherical or ellipsoid shape. The source/drain region may include a lighter-doped portion adjoining the recess. Relate fabrication methods are also discussed.
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申请公布号 |
US2007057288(A1) |
申请公布日期 |
2007.03.15 |
申请号 |
US20060556352 |
申请日期 |
2006.11.03 |
申请人 |
SAMSUNG ELECTRONICS., LTD. |
发明人 |
KIM SEONG-HO;LEE CHANG-SUB;CHOE JEONG-DONG;KIM SUNG-MIN;LEE SHIN-AE;PARK DONG-GUN |
分类号 |
H01L31/00;H01L21/28;H01L21/336;H01L29/423;H01L29/49;H01L29/78 |
主分类号 |
H01L31/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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