| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which can prevent the reduction in the breakdown voltage of the capacitor dielectric film formed on the impurities diffusion region of a semiconductor substrate. SOLUTION: The method of manufacturing a semiconductor device includes: a step for forming an n-type impurities diffusion region 24 by carrying out the ion implantation of arsenic to a capacitor formation region III of a silicon substrate 1, on conditions that beam current is no less than 1μA and less than 3 mA; a step for forming a capacitor dielectric film 25 on the capacitor formation region III of the silicon substrate 1; and a step for forming a capacitor upper electrode 30b on the capacitor dielectric film 25. COPYRIGHT: (C)2007,JPO&INPIT
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