| 摘要 |
PROBLEM TO BE SOLVED: To enable the removal of a natural oxide film by carrying out both of the thermal reduction treatment using a reducing gas whose main component is hydrogen and the plasma treatment using a reducing gas. SOLUTION: This manufacturing method of a semiconductor device comprises the steps of forming an electrically conductive layer 15 containing copper on an interlayer insulating film 11 formed on a substrate 10, so that the surface of the conductive layer 15 is exposed; carrying out the thermal reduction treatment using the reducing gas whose main component is hydrogen for the surface of the conductive layer 15; carrying out reduction treatment for the surface of the conductive layer 15 by performing plasma treatment containing the reducing gas for the surface of the conductive layer 15, and desorbing the hydrogen absorbed by the thermal reduction treatment; and forming an anti-oxidation film 17 covering the surface of the conductive layer 15 without exposing the surface of the conductive layer 15, after the plasma treatment to an atmosphere containing oxygen. COPYRIGHT: (C)2007,JPO&INPIT
|
