| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which mobility of a carrier is improved by applying a distortion to channels of an nMOSFET and a pMOSFET, and also to provide the manufacturing method of the same semiconductor device. SOLUTION: The semiconductor device comprises a gate electrode formed on a substrate via a gate insulating film, first and second MOSFETs including gate side walls formed in both sides of the gate electrode and source/drain regions formed on the substrate, an insulating film embedded between the adjacent gate side walls of the first and second MOSFETs, the gate electrode and gate side walls of the first and second MOSFETs, and a covering layer for covering the insulating film to apply a distortion to a channel formed between the source and drain regions. COPYRIGHT: (C)2007,JPO&INPIT
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