| 摘要 |
PROBLEM TO BE SOLVED: To reduce a manufacturing cost in a semiconductor memory device for storing information of plural bits per 1 cell. SOLUTION: The semiconductor memory device includes a memory cell (cells belonging to Wn<SB>i-1</SB>, W0<SB>i</SB>to Wn<SB>i</SB>) and a bypass (cells belonging to BW0<SB>i</SB>, BW0<SB>i-1</SB>, BW1<SB>i</SB>, BW1<SB>i-1</SB>). The memory cell includes a select gate 3a, a floating gate 6, a first diffusion region 7a, a second diffusion region 7b, and a first control gate 11a. The bypass includes a select gate 3a, a first diffusion region 7a, a second diffusion region 7b, and a second control gate 11b. The second control gate 11b controls a channel in a region between the select gate 3a and the first diffusion region 7a, or between the select gate 3a and the second diffusion region 7b. The channel in the bypass is a current supply path when reading the cells in the memory cell part. COPYRIGHT: (C)2007,JPO&INPIT
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