| 摘要 |
PROBLEM TO BE SOLVED: To provide technology for easily forming a contact without damaging a characteristic and reliability of an MIS transistor. SOLUTION: A manufacturing method of a semiconductor device comprises a process (A) for forming a gate insulating film 205 on a semiconductor substrate 201, a process (B) for forming a gate electrode 206 on the gate insulating film 205, a process (C) for forming a protection film comprising at least an amorphous carbon film 210 as a surface layer on a whole face, a process (D) for forming side walls 210a formed of the protection film on side faces of the gate electrode 206 by etch back, and a process (E) for selectively removing only the amorphous carbon film (210). COPYRIGHT: (C)2007,JPO&INPIT
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