| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device wherein the malfunction of a transistor due to disconnection of wiring is prevented. SOLUTION: In this semiconductor device, a gate wiring 12, a gate insulating film 13 and a source-drain wiring 14 are stacked on a substrate 11 in this order or in reverse order. At least either of the gate wiring 12 and the source-drain wiring 14 that is arranged on the side of the substrate 11 is formed of a stacked structure provided with a metal material layer 12a (14a) and a conductive organic material layer 12b (14b) or a carbon black layer. COPYRIGHT: (C)2007,JPO&INPIT
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