| 摘要 |
PROBLEM TO BE SOLVED: To solve such a problem on reliability in a conventional ferroelectric memory in which field-effect transistors having ferroelectric thin film are arranged at the gate section in a matrix shape, that the ferroelectric thin film is affected by disturbance due to a voltage applied on the gate section in reading, and decrease or change of a remanent polarization is generated every time it is repeated. SOLUTION: The influence of disturbance is offset by forming a correction pulse in a relation opposite to a voltage waveform to be applied on each word line and each bit line in reading and by applying the voltage after or before the reading. COPYRIGHT: (C)2007,JPO&INPIT
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