| 发明名称 |
HSG PROCESS AND PROCESS OF FABRICATING LARGE-AREA ELECTRODE |
| 摘要 |
A hemispherical silicon grain (HSG) process is described. A doped poly-Si layer is formed on a substrate, and then an oxidative gas is used to oxidize the surface of the doped poly-Si layer to form an oxide layer. An a-Si layer is then formed on the oxide layer, and the a-Si layer is converted into HSG.
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| 申请公布号 |
US2007059880(A1) |
申请公布日期 |
2007.03.15 |
| 申请号 |
US20050162534 |
申请日期 |
2005.09.14 |
| 申请人 |
YANG LI-FANG;HUANG KUN-SHU;PENG SHENG-HSIU;YING TZUNG-HUA |
发明人 |
YANG LI-FANG;HUANG KUN-SHU;PENG SHENG-HSIU;YING TZUNG-HUA |
| 分类号 |
H01L21/8242;H01L21/20 |
主分类号 |
H01L21/8242 |
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