| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device for which an element is protected from stress generated by a bonding process and a probing process without generating a crack on an insulating film on the lower side of a bonding pad. <P>SOLUTION: The semiconductor device comprises a pad 1, and a first interlayer insulating film 3 and a second interlayer insulating film 4 which are formed under the pad 1 and in which wiring is embedded. In the first interlayer insulating film 3 and the second interlayer insulating film 4, two or more lines of first wiring 12 and two or more lines of second wiring 13 are respectively embedded. Each first wiring 12 is a planar rectangular conductive film formed on the lower side of the pad 1 at an interval from each other. On the lower side of the pad 1, each first wiring 12 is straightly formed and does not have a bend or a branch. Also, on the lower side of the pad 1, the first interlayer insulating film 3 is not provided with wiring for electrically connecting the first wiring 12 with each other. <P>COPYRIGHT: (C)2007,JPO&INPIT |
