| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a highly efficient polishing method for obtaining a predetermined flatness by a chemomechanical polishing method in which an SiC substrate is polished using colloidal silica as abrasive grain. <P>SOLUTION: The chemomechanical polishing method uses colloidal silica as abrasive grain, drops an abrasive agent to a rotating polishing pad, and polishes the SiC substrate by depressing the SiC substrate under polish to the polishing pad with a predetermined pressure. The polishing is carried out using a mixed polishing agent of colloidal silica grain having a first abrasive grain distribution and a disperse catalyst containing pH adjuster, subsequently, the polishing is carried out using the mixed polishing agent of colloidal silica grain having a second abrasive grain distribution sharper than the first abrasive grain distribution and a disperse catalyst containing pH adjuster. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
