| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric memory which corresponds to fining and high density and realizes simplification of a manufacturing process, and to provide its manufacturing method. SOLUTION: The ferroelectric memory comprises a substrate 10, interlayer insulating layers 30, 34 which are formed above the substrate 10 and consist of at least one layer, a plurality of ferroelectric capacitors C<SB>11</SB>, C<SB>22</SB>formed above the interlayer insulating layers 30, 34, a coating layer 70 coating a plurality of ferroelectric capacitors C<SB>11</SB>, C<SB>22</SB>, a first opening 72 provided between a plurality of ferroelectric capacitors C<SB>11</SB>, C<SB>22</SB>, a second opening 74 which is communicated with the first opening 72 and formed in the coating layer 70 and the interlayer insulating layer 34, and a conductive layer 82 integrally provided inside the first and second openings 72, 74. COPYRIGHT: (C)2007,JPO&INPIT
|
